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BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability
The BUD42D is a state-of-the-art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally suitable for light ballast applications.
Main Features:
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* * * * * *
Free Wheeling Diode Built In Flat DC Current Gain Fast Switching Times and Tight Distribution "6 Sigma" Process Providing Tight and Reproducible Parameter Spreads Epoxy Meets UL94, VO @ 1/8" ESD Ratings: Machine Model, C; >400 V Human Body Model, 3B; >8000 V
4 AMPERES 650 VOLTS 25 WATTS POWER TRANSISTOR
MARKING DIAGRAMS
4 12 3 4 Collector YWW BU D42D 2 1 Collector 3 Base Emmitter 4 Collector YWW BU D42D 1 3 DPAK CASE 369D Style 1 2 1 2 3 Base Collector Emmitter Y = Year WW = Work Week BUD43D = Device Code 4 Package DPAK DPAK Straight Lead DPAK Shipping 75 Units/Rail 75 Units/Rail 2500 Tape & Reel Publication Order Number: BUD42D/D
Two Versions:
* BUD42D-1: Case 369D for Insertion Mode * BUD42D, BUD42DT4: Case 369C for Surface Mount Mode
MAXIMUM RATINGS
Rating Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Voltage Collector Current - Continuous - Peak (Note 1) Base Current - Continuous - Peak (Note 1) *Total Device Dissipation @ TC = 25_C *Derate above 25_C Operating and Storage Temperature Symbol VCEO VCBO VCES VEBO IC ICM IB IBM PD TJ, Tstg Value 350 650 650 9 4.0 8.0 1.0 2.0 25 0.2 -65 to +150 Unit Vdc Vdc Vdc Vdc Adc Adc Watt W/_C _C
DPAK CASE 369C Style 1
TYPICAL GAIN
Typical Gain @ IC = 1 A, VCE = 2 V Typical Gain @ IC = 0.3 A, VCE = 1 V hFE hFE 13 16 - -
ORDERING INFORMATION
Device
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance - Junction-to-Case Thermal Resistance - Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 seconds Symbol RJC RJA TL Value 5.0 71.4 260 Unit C/W C/W C
BUD42D BUD42D-1 BUD42DT4
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle = 10%
(c) Semiconductor Components Industries, LLC, 2003
1
August, 2003 - Rev. 2
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I II I I I II I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I II I IIIIIIIIIIIIIIIIIII I I I II I I I II I II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I III I I I I I I II I I I II I II II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I II I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII I I II I I I II I I II I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I II I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
DYNAMIC SATURATION VOLTAGE SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 40 s) DIODE CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS Dynamic Saturation Voltage: Determined 1 s and 3 s respectively after rising IB1 reaches 90% of final IB1 Collector Cutoff Current (VCE = Rated VCES, VEB = 0) Fall Time (IC = 2.5 Adc, IB1 = IB2 = 0.5 A, VCC = 150 V, VBE = -2 V) Turn-Off Time (IC = 1.2 Adc, IB1 = 0.4 A, IB2 = 0.1 A, VCC = 300 V) Forward Diode Voltage (IEC = 1.0 Adc) DC Current Gain (IC = 1 Adc, VCE = 2 Vdc) (IC = 2 Adc, VCE = 5 Vdc) Collector-Emitter Saturation Voltage (IC = 2 Adc, IB = 0.5 Adc) Base-Emitter Saturation Voltage (IC = 1 Adc, IB = 0.2 Adc) Emitter-Cutoff Current (VEB = 9 Vdc, IC = 0) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Emitter-Base Breakdown Voltage (IEBO = 1 mA) Collector-Base Breakdown Voltage (ICBO = 1 mA) Collector-Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) Characteristic IC = 1 A IB1 = 200 mA VCC = 300 V IC = 400 mA IB1 = 40 mA VCC = 300 V @ 3 s @ 1 s @ 3 s @ 1 s @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C
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BUD42D
2 VCEO(sus) VCE(dsat) Symbol VCE(sat) VBE(sat) VCBO VEBO ICEO IEBO ICES VEC hFE Toff Tf Min 650 350 4.6 8.0 10 9.0 - - - - - - - - - - - - - - - - - 0.85 0.35 0.6 0.75 1.3 Typ 780 430 0.9 0.2 2.1 4.7 2.8 3.2 13 12 12 - - - - - - - 6.55 Max 10 200 100 100 200 0.8 1.5 1.0 1.2 - - - - - - - - - - - - - Adc Adc Adc Unit Vdc Vdc Vdc Vdc Vdc s s V V -
BUD42D
TYPICAL STATIC CHARACTERISTICS
100 100
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
TJ = 125C TJ = 25C 10 TJ = -20C
TJ = 125C TJ = 25C 10 TJ = -20C
1
0.001
0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS)
10
1
0.001
0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS)
10
Figure 1. DC Current Gain @ VCE = 1 V
Figure 2. DC Current Gain @ VCE = 5 V
3 TJ = 25C VCE , VOLTAGE (VOLTS) 2A 2 1.5 A 1A 1 IC = 0.2 A 0 0.001 0.01 0.4 A VCE , VOLTAGE (VOLTS)
10 IC/IB = 5
1
TJ = 125C 0.1 TJ = -20C
TJ = 25C
1 0.1 IB, BASE CURRENT (AMPS)
10
0.01 0.001
0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS)
10
Figure 3. Collector Saturation Region
Figure 4. Collector-Emitter Saturation Voltage
100 IC/IB = 8 VCE , VOLTAGE (VOLTS) VCE , VOLTAGE (VOLTS) 10 TJ = 125C 1 TJ = -20C
10 IC/IB = 10 TJ = -20C TJ = 125C TJ = 25C
1
TJ = 25C
0.1
0.1
0.01 0.001
1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS)
10
0.01 0.001
1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS)
10
Figure 5. Collector-Emitter Saturation Voltage
Figure 6. Collector-Emitter Saturation Voltage
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BUD42D
TYPICAL STATIC CHARACTERISTICS
10 IC/IB = 5 VBE , VOLTAGE (VOLTS) VBE , VOLTAGE (VOLTS) 10 IC/IB = 8
1
TJ = -20C
1
TJ = -20C
TJ = 125C
TJ = 25C
TJ = 125C
TJ = 25C
0.1 0.001
1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS)
10
0.1 0.001
1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS)
10
Figure 7. Base-Emitter Saturation Region
Figure 8. Base-Emitter Saturation Region
10 FORWARD DIODE VOLTAGE (VOLTS) IC/IB = 10 VBE , VOLTAGE (VOLTS)
10
1
TJ = -20C
1
VEC(V) = -20C VEC(V) = 125C VEC(V) = 25C
TJ = 125C
TJ = 25C
0.1 0.001
1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS)
10
0.1 0.01
0.1 1 REVERSE EMITTER-COLLECTOR CURRENT
10
Figure 9. Base-Emitter Saturation Region
Figure 10. Forward Diode Voltage
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BUD42D
TYPICAL SWITCHING CHARACTERISTICS
1000 Cib C, CAPACITANCE (pF) 100 Cob 10 TJ = 25C f(test) = 1 MHz BVCER (VOLTS) 900 800 700 600 500 400 TC = 25C 1 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 300 10 100 RBE (W) 1000 10000 ICER = 100 mA lC = 25 mH ICER = 10 mA
Figure 11. Capacitance
Figure 12. BVCER = f(RBE)
800 700 600 t, TIME (ns) 500 400 300 200 100 0 0 TJ = 125C TJ = 25C 0.5 1.5 1 IC, COLLECTOR CURRENT (AMPS) 2 hFE = 5 hFE = 10 IBon = IBoff VCC = 300 V PW = 40 s
9 IBon = IBoff VCC = 300 V PW = 40 s 6 t, TIME (ns)
hFE = 5 3 TJ = 125C TJ = 25C 0 0
hFE = 10 2
1.5 0.5 1 IC, COLLECTOR CURRENT (AMPS)
Figure 13. Resistive Switching, ton
Figure 14. Resistive Switching, toff
4 IBon = IBoff VCE = 15 V VZ = 300 V LC = 200 H TJ = 125C
4 IBon = IBoff VCE = 15 V VZ = 300 V LC = 200 H
3 t, TIME ( s)
TJ = 125C 3 TJ = 25C t, TIME ( s) TJ = 25C 2
2
1
0
0
0.5 1 1.5 IC, COLLECTOR CURRENT (AMPS)
2
1
0.5
1.5 1 IC, COLLECTOR CURRENT (AMPS)
2
Figure 15. Inductive Storage Time, tsi @ hFE = 5 http://onsemi.com
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Figure 16. Inductive Storage Time, tsi @ hFE = 10
BUD42D
TYPICAL SWITCHING CHARACTERISTICS
400 250 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H TJ = 125C TJ = 25C t, TIME (ns) 200 TJ = 125C
300 t, TIME (ns)
tc 200 tfi
TJ = 25C 150 IBon = IBoff VCE = 15 V VZ = 300 V LC = 200 H 0.5 1.5 1 IC, COLLECTOR CURRENT (AMPS) 2
100
0
0.5 1 1.5 IC, COLLECTOR CURRENT (AMPS)
2
100
Figure 17. Inductive Fall and Cross Over Time, tfi and tc @ hFE = 5
5 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H TJ = 125C 4 t, TIME ( m s)
Figure 18. Inductive Fall Time, tfi @ hFE = 10
500
400 t, TIME (ns)
IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H IC = 1 A
TJ = 125C TJ = 25C
3
300 TJ = 25C 2 IC = 0.3 A
200
0.5
1 1.5 IC, COLLECTOR CURRENT (AMPS)
2
1
3
4
5
6
7 8 9 hFE, FORCED GAIN
10
11
12
Figure 19. Inductive Cross Over Time, tc @ hFE = 10
Figure 20. Inductive Storage Time, tsi
300 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H
300
CROSS-OVER TIME (ns)
t fi , FALL TIME (ns)
IC = 0.3 A
IC = 1 A 200
IC = 0.3 A
200
IC = 1 A
TJ = 125C TJ = 25C 100 3 4 5 6 7 hFE, FORCED GAIN 8 9 10 100 2 4
TJ = 125C TJ = 25C 6 hFE, FORCED GAIN 8
IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H 10
Figure 21. Inductive Fall Time, tf
Figure 22. Inductive Cross Over Time, tc
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BUD42D
TYPICAL SWITCHING CHARACTERISTICS
3 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H IB 1 & 2 = 200 mA t fr , FORWARD RECOVERY TIME (ns) 440 di/dt = 10 A/ms, TC = 25C 420 400 380 360 340 320 300 0 1.5 1 0.5 IF, FORWARD CURRENT (AMPS) 2
2.5 t, TIME ( m s)
500 mA
2
50 mA
100 mA
1.5
1
0
0.5 1 1.5 IC, COLLECTOR CURRENT (AMPS)
2
Figure 23. Inductive Storage Time, tsi
Figure 24. Forward Recovery Time, tfr
10 VCE Dyn 1 ms Dyn 3 ms 6 0V 90% IB IB 1 ms 3 ms 2 0 TIME Vclamp 4 IB 90% IB1 10% Vclamp tc 8 IC tsi 90% IC tfi 10% IC
0
2
4 TIME
6
8
Figure 25. Dynamic Saturation Voltage Measurements
Figure 26. Inductive Switching Measurements
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BUD42D
TYPICAL SWITCHING CHARACTERISTICS
Table 1. Inductive Load Switching Drive Circuit
+15 V 1 F 150 3W 100 3W MTP8P10 100 F VCE PEAK MTP8P10 MPF930 MUR105 +10 V MPF930 A 50 MJE210 COMMON 500 F 150 3W MTP12N10 RB2 V(BR)CEO(sus) L = 10 mH RB2 = VCC = 20 Volts IC(pk) = 100 mA IB2 Inductive Switching L = 200 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RB1 Iout VCE IB1 IB IC PEAK
1 F -Voff
VFRM VF
VFR (1.1 VF) UNLESS OTHERWISE SPECIFIED
0.1 VF
tfr
IF
10% IF
Figure 27. tfr Measurement
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BUD42D
MAXIMUM RATINGS
10 IC , COLLECTOR CURRENT (AMPS) IC , COLLECTOR CURRENT (AMPS) 5 ms dc 1 EXTENDED SOA 1 ms 10 ms 1 ms 4 5 TJ = 125C GAIN 4 LC = 500 mH
3 2 VBE(off) = -5 V VBE = 0 V 300 VBE(off) = -1.5 V 700
0.1
1 0
0.01 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000
400 500 600 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 28. Forward Bias Safe Operating Area
Figure 29. Reverse Bias Safe Operating Area
1 POWER DERATING FACTOR SECOND BREAKDOWN DERATING
0.8
0.6 0.4
0.2 THERMAL DERATING 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) 140 160
Figure 30. Power Derating
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 28 is based on TC = 25C; Tj(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25C. Second Breakdown limitations do not derate like thermal limitations. Allowable current at the voltages shown on
Figure 28 may be found at any case temperature by using the appropriate curve on Figure 30. Tj(pk) may be calculated from the data in Figure 31. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn-off with the base to emitter junction reverse biased. The safe level is specified as reverse biased safe operating area (Figure 29). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.
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BUD42D
1 D = 0.5 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.01 0.1 1 t, TIME (ms) 10 100 1000 t2 DUTY CYCLE, D = t1/t2 t1 P(pk) RJC(t) = r(t) RJC RJC = 5C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t)
Figure 31. Thermal Response Minimum Pad Sizes Recommended for Surface Mounted Applications
6.20 0.244 3.0 0.118
2.58 0.101
5.80 0.228
1.6 0.063
6.172 0.243
SCALE 3:1
mm inches
TYPICAL SOLDER HEATING PROFILE For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating "profile" for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 32 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177-189C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints.
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BUD42D
STEP 1 PREHEAT ZONE 1 RAMP" 200C STEP 2 STEP 3 VENT HEATING SOAK" ZONES 2 & 5 RAMP" STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 SPIKE" SOAK" 170C 160C STEP 6 VENT STEP 7 COOLING 205 TO 219C PEAK AT SOLDER JOINT
DESIRED CURVE FOR HIGH MASS ASSEMBLIES 150C
150C
100C 100C
140C
SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY)
50C
DESIRED CURVE FOR LOW MASS ASSEMBLIES
TIME (3 TO 7 MINUTES TOTAL)
TMAX
Figure 32. Typical Solder Heating Profile
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BUD42D
PACKAGE DIMENSIONS
DPAK CASE 369C-01 ISSUE O
-T- B V R
4 SEATING PLANE
C E
DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 ---
A S
1 2 3
Z U
K F L D G
2 PL
J H 0.13 (0.005) T
M
STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR
DPAK CASE 369D-01 ISSUE O
B V R
4
C E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 ---
Z A
3
S -T-
SEATING PLANE
1
2
K
F D G
3 PL
J H 0.13 (0.005)
M
DIM A B C D E F G H J K R S V Z
T
STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR
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BUD42D
Notes
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BUD42D
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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BUD42D/D

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